product specifications semiconductor technology, inc. 3131 s. e. jay street, stuart, fl 34997 type : MJH16212 ph: (561)283 - 4500 fax: (561)286 - 8914 website: http://www.semi - tech - inc.com case outlin e: to - 218 npn silicon high voltage power transistor absolute maximum rating: collector to base voltage bv cbo vdc collector to emitter voltage bv cev 1500 vdc emitter to base bv ebo 8.0 vdc collector to emitter bv ceo(sus) 650 vdc continuous colle ctor current i c 10 adc peak collector current i cm 15 adc power dissipation t a = 25 c p d 150 watts power dissipation t c = 25 c p d watts storage temperature t stg - 55 to +125 c operating temperature t j - 55 to +125 c lead temperature from case t l 27 5 c electrical characteristics ta @ 25 c parameters symbol test conditions min typ max unit collector to base voltage bv cbo vdc emitter to base voltage bv ebo i e = 1.0ma 8.0 vdc collector to emitter voltage bv ceo(sus) i c = 10ma i b = 0 650 vdc collector to emitter voltage bv ceo vdc collector to emitter voltage bv cev vdc collector cutoff current i cbo ma collector cutoff current i cbo ma collector cutoff current i ces v ce = 1500v v be = 0 250 m a collector cutoff current i ces v ce = 1200v v be = 0 25 m a collector cutoff current i cev ma emitter cutoff current i ebo v eb = 8.0v 25 m a d.c. current gain pulsed* h fe i c = 1.0a v ce = 5.0v 24 - d.c. current gain pulsed* h fe i c = 10a v ce = 5.0v 4.0 6.0 10 - d.c. curren t gain pulsed* hfe - d.c. current gain pulsed* h fe - d.c. current gain pulsed* h fe - saturation voltage* v ce(sat) i c = 5.5a i b = 2.2a 1.0 vdc saturation voltage* v ce(sat) i c = 3.0a i b = 400ma 1.0 vdc saturation voltage* v ce(sat) vd c base emitter voltage* v be(sat) i c = 5.5a i b = 2.2a 1.5 vdc base emitter voltage* v be(sat) vdc base emitter voltage* v be(sat) vdc base emitter voltage* v be(on) vdc notes: *pulse width 300usec 2% duty cycle page 1 of 2 pt - 1 0 2/19/01
type: MJH16212 small signal characteristics symbol min typ max units current gain at f = h fe - input capacitance c ib pf output capacitance v ce = 10v i e = 0 f test = 100khz c ob 350 pf transition frequency i c = 0.5a v ce = 10v f test = 1.0mhz f t 2.75 mhz input impedance ohms voltage feedback ratio x10 - 4 output admittance m mhos noise figure nf db switching characteristics resistive load symbol min typ max units turn - on time t on m s turn - off time t off m s delay time t d m s rise time t r m s storage time t s m s fall time t f m s inductive load symbol min typ max units storage time t sv 4000 ns crossover time t c m s f all time i c = 5.5a i b = 2.2a t fi 500 ns storage time t sv m s crossover time t c m s fall time t fi m s functional test symbol min typ max units common - emitter amplifier power gain gpe db power output pout watt collector efficiency h % power output pout watt second breakdown collector current i s/b a thermal - resistance, junction to case r q jc 0.67 c/w page 2 of 2 pt - 1 02/19/01
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